MONTE CARLO SIMULATION OF GROWTH ON SILICON {111} SURFACES

D. L. Woodraska and J. A. Jaszczak

Growth at a screw dislocation intersecting the surface:

Image created with PVWave.

Image created with SISURF1.0 by Woodraska and Lepak.

Growth of Si{111} near a pair of screw dislocations. One dislocation is near the center of the surface while the other, of opposite character, is at the simulation-cell edge. Periodic boundary conditions have been used.

Note in the center right that steps from the two dislocations have merged togeather and form a terrace with a growth front that is rounded due to the rapid growth produced by kinks formed as the separate steps merged.