Edward M. Nadgorny - Research Projects
Dislocation Engineering in Si
The picture below shows an array of four dislocations
selectively etched on a {111} Si substrate (AFM image, Nanoscope Dimension 3000 SPM, Digital
Instruments). The dislocations were introduced into a dislocation-free 0.4-mm substrate by local
deformation and bending at about 900 K; they were revealed by selective dislocation etching.
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