Edward M. Nadgorny - Plasma Etching of Dislocations in Si
...The effect of dislocations on plasma etching is studied in a parallel-plate RF
discharge, the GEC Reference Cell, in the Dislocation Physics Laboratory
of the Department of Physics.
The pictures below show two AFM images (TMX 2010 MultiView AFM, TopoMetrix) of the same marked area at different
scales on a {111} silicon wafer with four deliberately introduced dislocations. The wafer was etched in the
Reference Cell shown above in the CF4/O2 plasma within a pressure range
of 0.1 to 1.0 Torr.
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